SS8050 Datasheet | Fairchild Semiconductor

Features - 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. - plimentary to SS8550 - Collector Current: IC = 1.5 A 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Information Part Number SS8050BBU SS8050CBU SS8050CTA SS8050DBU SS8050DTA Top Mark S8050 S8050 S8050 S8050 S8050 Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L Packing Method Bulk Bulk Ammo Bulk Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the remended operating conditions and stressing the parts to these levels is not remended. In addition, extended exposure to stresses above the remended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO VCEO VEBO IC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature 40 25 6 1.5 150 -65 to 150 V V V A °C °C © 2004 Fairchild Semiconductor Corporation SS8050 Rev. 1.1.0 .fairchildsemi. - NPN Epitaxial Silicon Transistor Thermal Characteristics(1) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit Power Dissipation PD Derate Above 25°C 1W 8 m W/°C RθJA Thermal Resistance, Junction-to-Ambient 125 °C/W Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter...